Optoelectronic properties of coexisting InGaZnO4 structures

Electronic and Optoelectronic Properties of Semiconductor Structures

Optoelectronic Properties of PbS Films: Effect of Carrier Gas

In this study, lead sulfide (PbS) films were grown on Fluorine-doped TinOxide (FTO) glass substrate by thermal evaporation in a horizontal furnace toinvestigate carrier gas effect on structural, morphological, elemental, optical, electricaland photovoltaic properties of PbS. X-ray diffraction (XRD) patterns confirmed theformation of cubic polycrystalline PbS particles fo...

Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries.

Although CdSe nanostructures possess excellent electrical and optical properties, efforts to make nano-optoelectronic devices from CdSe nanostructures have been hampered by the lack of efficient methods to rationally control their structural and electrical characteristics. Here, we report CdSe nanowires (NWs) with doping dependent crystal structures and optoelectronic properties by using galliu...

Optoelectronic Properties of Van Der Waals Hybrid Structures: Fullerenes on Graphene Nanoribbons

The search for new optical materials capable of absorbing light in the frequency range from visible to near infrared is of great importance for applications in optoelectronic devices. In this paper, we report a theoretical study of the electronic and optical properties of hybrid structures composed of fullerenes adsorbed on graphene and on graphene nanoribbons. The calculations are performed in...

Optoelectronic properties of hexagonal boron nitride epilayers

This paper summarizes recent progress primarily achieved in authors’ laboratory on synthesizing hexagonal boron nitride (hBN) epilayers by metal organic chemical vapor deposition (MCVD) and studies of their structural and optoelectronic properties. The structural and optical properties of hBN epilayers have been characterized by x-ray diffraction (XRD) and photoluminescence (PL) studies and com...